Patent · US Active

Optical device having a quantum-dot structure

US7968863B2 · kind B2 · utility

1Cited by
2References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 11, 2009
Grant dateJun 28, 2011
Priority date
Expiry dateFeb 6, 2030

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S438/962
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

Method of manufacturing an optical device, and an optical device, the optical device having one or more layers (13) of quantum-dots located in-between barrier layers (12). A spacer layer (15) is grown on a barrier layer (12), such that the spacer layer (15) is adapted for substantially blocking strain fields induced by quantum-dot layers, thereby producing a smooth growth front for a subsequent barrier layer (12).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.