Optical device having a quantum-dot structure
US7968863B2 · kind B2 · utility
1Cited by
2References
18Claims
0Family size
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Key dates
| Filing date | Jun 11, 2009 |
| Grant date | Jun 28, 2011 |
| Priority date | — |
| Expiry date | Feb 6, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/962
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Method of manufacturing an optical device, and an optical device, the optical device having one or more layers (13) of quantum-dots located in-between barrier layers (12). A spacer layer (15) is grown on a barrier layer (12), such that the spacer layer (15) is adapted for substantially blocking strain fields induced by quantum-dot layers, thereby producing a smooth growth front for a subsequent barrier layer (12).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.