Spintronic device with control by domain wall displacement induced by a current of spin-polarized carriers
US7969762B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2005 |
| Grant date | Jun 28, 2011 |
| Priority date | — |
| Expiry date | Jul 27, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The general field of the invention is that of spintronics, namely the field of electronics using the magnetic spin properties of electrons. The main fields of application are the very large-scale magnetic storage of information and the measurement of local magnetic fields. The object of the invention is to considerably reduce the energy needed to reverse the magnetic domains of the ferromagnetic elements of submicron dimensions using the mechanism of the domain wall displacements that is induced either by just a current of spin-polarized carriers or by the combination of a current of spin-polarized carriers and a magnetic field, at least one of these being variable. This domain wall displacement results in a change of magnetic polarization in a specified switching zone. Several devices according to the invention are described that possess from one switching zone up to a plurality of switching zones according to the invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.