Semiconductor device with thermally coupled phase change layers
US7969771B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2008 |
| Grant date | Jun 28, 2011 |
| Priority date | — |
| Expiry date | Jan 15, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/34
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Various embodiments of the present invention are generally directed to an apparatus and method associated with a semiconductor device with thermally coupled phase change layers. The semiconductor device comprises a first phase change layer selectively configurable in a relatively low resistance crystalline phase and a relatively high resistance amorphous phase, and a second phase change layer thermally coupled to the first phase change layer. The second phase change layer is characterized as a metal-insulator transition material. A programming pulse is applied to the semiconductor device from a first electrode layer to a second electrode layer to provide the first phase change layer with a selected resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.