Creating method of photomask pattern data, photomask created by using the photomask pattern data, and manufacturing method of semiconductor apparatus using the photomask
US7971160B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 22, 2008 |
| Grant date | Jun 28, 2011 |
| Priority date | — |
| Expiry date | Jul 26, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for creating a pattern on a photomask includes steps of recognizing a space between main patterns by using pattern data which indicate the main patterns to be adjacently transferred onto a wafer, determining a 1st rule about arrangement of an assist pattern on the photomask, the assist pattern being adjacent to the main patterns and not being transferred onto the wafer, estimating a depth of focus in the presence of the assist pattern among the main patterns, determining a 2nd rule about arrangement of the assist pattern on the photomask to improve the depth of focus in the presence of the 1st assist pattern among the main patterns in a group having one or more number of appearance times of the space between main patterns, and correcting the assist pattern on the photomask using the assist pattern data on the basis of the 2nd rule.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.