Triple-layer semiconductor nanoparticle and triple-layer semiconductor nanorod
US7972694B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 27, 2006 |
| Grant date | Jul 5, 2011 |
| Priority date | — |
| Expiry date | Dec 3, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/2991
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A semiconductor nanoparticle and semiconductor nanorod that have optical characteristics (luminescence intensity and emission lifetime) superior to those of conventional core/shell nanosized semiconductors. There are provided a triple-layer semiconductor nanoparticle, and triple-layer semiconductor nanorod, having an average particle diameter of 2 to 50 nm and comprising a core layer, an interlayer and a shell layer, wherein the layers are composed of different crystals, and wherein the crystal constructing the shell layer exhibits a band gap greater than that of the crystal constructing the core layer, and wherein the crystal constructing the interlayer has a lattice constant assuming a value between those of the crystal constructing the core layer and the crystal constructing the shell layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.