Baffle wafers and randomly oriented polycrystalline silicon used therefor
US7972703B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 9, 2006 |
| Grant date | Jul 5, 2011 |
| Priority date | — |
| Expiry date | Aug 28, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24355
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Baffle wafers of polycrystalline silicon are placed in non-production slots of a support tower for thermal processing monocrystalline silicon wafers. The polycrystalline silicon is preferably randomly oriented Czochralski polysilicon grown using a randomly oriented seed, for example, CVD grown silicon. An all-silicon hot zone of a thermal furnace may include a silicon support tower placed within a silicon liner and supporting the polysilicon baffle wafers with silicon injector tube providing processing gas within the liner. The randomly oriented polysilicon may be used for other parts requiring a rugged member, for example, within a silicon processing chamber and for structural members.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.