Zinc-oxide-based semiconductor light-emitting device and method of fabricating the same
US7972876B2 · kind B2 · utility
1Cited by
1References
7Claims
0Family size
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Key dates
| Filing date | Feb 28, 2008 |
| Grant date | Jul 5, 2011 |
| Priority date | — |
| Expiry date | Jan 27, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention discloses a zinc-oxide-based semiconductor light-emitting device and the fabrication thereof. The method according to the invention, first, is to prepare a substrate. Next, by an atomic-layer-deposition-based process, a ZnO-based multi-layer structure is formed on or over the substrate where the ZnO-based multi-layer structure includes a light-emitting region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.