Schottky barrier diode and method for making the same
US7973318B2 · kind B2 · utility
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3Claims
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Key dates
| Filing date | Oct 18, 2007 |
| Grant date | Jul 5, 2011 |
| Priority date | — |
| Expiry date | Nov 4, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/106
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A schottky diode includes a SiC substrate which has a first surface and a second surface facing away from the first surface, a semiconductor layer which is formed on the first surface of the SiC substrate, a schottky electrode which is in contact with the semiconductor layer, and an ohmic electrode which is in contact with the second surface of the SiC substrate. The first surface of the SiC substrate is a (000-1) C surface, upon which the semiconductor layer is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.