Field-effect transistor having group III nitride electrode structure
US7973335B2 · kind B2 · utility
33Cited by
2References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 15, 2003 |
| Grant date | Jul 5, 2011 |
| Priority date | — |
| Expiry date | Mar 27, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A field plate portion (5) overhanging a drain side in a visored shape is formed in a gate electrode (2). A multilayered film including a SiN film (21) and a SiO2 film (22) is formed beneath the field plate portion (5). The SiN film (21) is formed so that a surface of an AlGaN electron supply layer (13) is covered therewith.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.