Patent · US Active

Write current compensation using word line boosting circuitry

US7974121B2 · kind B2 · utility

4Cited by

7References

20Claims

0Family size

Assignee

Seagate Technology LLC · US

Inventors

Hai Li · Eden Prairie, US
Yiran Chen · Eden Prairie, US
Harry Hongyue Liu · Maple Grove, US
Henry Huang · Apple Valley, US
Ran Wang · Beijing, CN

Key dates

Filing date	Dec 14, 2010
Grant date	Jul 5, 2011
Priority date	—
Expiry date	Dec 14, 2030

Classification

Technology area (CPC G)Physics
CPC primaryG11C2013/0071
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Apparatus and method for write current compensation in a non-volatile memory cell, such as but not limited to spin-torque transfer random access memory (STRAM) or resistive random access memory (RRAM). In accordance with some embodiments, a non-volatile memory cell has a resistive sense element (RSE) coupled to a switching device, the RSE having a hard programming direction and an easy programming direction opposite the hard programming direction. A voltage boosting circuit includes a capacitor which adds charge to a nominal non-zero voltage supplied by a voltage source to a node to generate a temporarily boosted voltage. The boosted voltage is applied to the switching device when the RSE is programmed in the hard programming direction.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.