Nitride semiconductor laser diode
US7974322B2 · kind B2 · utility
22Cited by
12References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2010 |
| Grant date | Jul 5, 2011 |
| Priority date | — |
| Expiry date | Jan 16, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2201
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A nitride semiconductor laser device includes: a substrate made of silicon in which a plane orientation of a principal surface is a {100} plane; and a semiconductor laminate that includes a plurality of semiconductor layers formed on the substrate and includes a multiple quantum well active layer, each of the plurality of semiconductor layers being made of group III-V nitride. The semiconductor laminate has a plane parallel to a {011} plane which is a plane orientation of silicon as a cleavage face and the cleavage face constructs a facet mirror.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.