Hybrid laser diode for single mode operation and method of fabricating the same
US7974326B2 · kind B2 · utility
2Cited by
4References
11Claims
0Family size
Assignee
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Key dates
| Filing date | May 9, 2008 |
| Grant date | Jul 5, 2011 |
| Priority date | — |
| Expiry date | Jul 24, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32333
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided are a hybrid laser diode for single mode operation, and a method for manufacturing the hybrid laser diode. The hybrid laser diode includes a silicon layer, an active pattern disposed on the silicon layer, and a bonding layer disposed between the silicon layer and the active pattern. Here, the bonding layer includes diffraction patterns constituting a Bragg grating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.