High negative zeta potential polyhedral silsesquioxane composition and method for damage free semiconductor wet clean
US7976638B2 · kind B2 · utility
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15References
47Claims
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Key dates
| Filing date | Nov 12, 2008 |
| Grant date | Jul 12, 2011 |
| Priority date | — |
| Expiry date | Mar 25, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A composition for removing particulate matter from integrated circuit substrates, including (a) one or more metal ion-free base; (b) a water-soluble metal ion-free onium salt of a polyhedral silsesquioxane; (c) an oxidizing agent; and (d) metal ion-free water, and a composition obtained by combining ingredients including (a), (b), (c) and (d). A process for removing particulate matter from a surface of an integrated circuit device, including applying to the surface the composition including (a), (b), (c) and (d) or applying to the surface the composition obtained by combining ingredients including (a), (b), (c) and (d).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.