Method of forming polarization reversal area, apparatus thereof and device using it
US7976717B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2006 |
| Grant date | Jul 12, 2011 |
| Priority date | — |
| Expiry date | Jul 10, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12465
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided are a method and an apparatus for forming a nanometer-order polarization-reversed region in a ferroelectric single crystal, and a device using the ferroelectric single crystal.The method according to the present invention for forming a polarization-reversed region in a ferroelectric single crystal includes the steps of grounding a first surface of the ferroelectric single crystal, and irradiating a second surface of the ferroelectric single crystal opposite to the first surface with an ion beam. The ion beam is irradiated such that the charge density Q (μC/cm2) accumulated on the second surface irradiated with the ion beam satisfies the following relationship:0.7×Ps≦Q≦5×Ps where Ps is the spontaneous polarization (μC/cm2) of the ferroelectric single crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.