Method of manufacturing organic light emitting device having photo diode
US7977126B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 7, 2008 |
| Grant date | Jul 12, 2011 |
| Priority date | — |
| Expiry date | Oct 31, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/13
Abstract
A method for manufacturing an organic light emitting device including a photo diode and a transistor includes forming a first semiconductor layer and a second semiconductor layer on separate portions of a buffer layer formed on the substrate; forming a gate metal layer on the first semiconductor layer, the gate metal layer covering a central region of the first semiconductor layer; forming a high-concentration P doping region and a high-concentration N doping region in the first semiconductor layer by injecting impurities into regions of the first semiconductor layer not covered by the gate metal layer to form the photodiode; forming a source and drain region and a channel region in the second semiconductor layer; and removing the gate metal layer from the central region of the first semiconductor layer by etching and simultaneously forming a gate electrode by etching, the gate electrode being insulated from the channel region of the second semiconductor layer, to form the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.