Double self-aligned metal oxide TFT
US7977151B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 21, 2009 |
| Grant date | Jul 12, 2011 |
| Priority date | — |
| Expiry date | Jan 6, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02565
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating metal oxide TFTs on transparent substrates includes the steps of positioning an opaque gate metal area on the front surface of the substrate, depositing transparent gate dielectric and transparent metal oxide semiconductor layers overlying the gate metal and a surrounding area, depositing transparent passivation material on the semiconductor material, depositing photoresist on the passivation material, exposing and developing the photoresist to remove exposed portions, etching the passivation material to leave a passivation area defining a channel area, depositing transparent conductive material over the passivation area, depositing photoresist over the conductive material, exposing and developing the photoresist to remove unexposed portions, and etching the conductive material to leave source and drain areas on opposed sides of the channel area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.