Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
US7977169B2 · kind B2 · utility
126Cited by
1References
12Claims
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Key dates
| Filing date | Feb 9, 2007 |
| Grant date | Jul 12, 2011 |
| Priority date | — |
| Expiry date | Oct 28, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/405
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes an oxide semiconductor thin film layer primarily including zinc oxide having at least one orientation other than (002) orientation. The zinc oxide may have a mixed orientation including (002) orientation and (101) orientation. Alternatively, the zinc oxide may have a mixed orientation including (100) orientation and (101) orientation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.