Metal inks for improved contact resistance
US7977240B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2009 |
| Grant date | Jul 12, 2011 |
| Priority date | — |
| Expiry date | Apr 3, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Metal ink compositions, methods of forming such compositions, and methods of forming conductive layers are disclosed. The ink composition includes a bulk metal, a transition metal source, and an organic solvent. The transition metal source may be a transition metal capable of forming a silicide, in an amount providing from 0.01 to 50 at. % of the transition metal relative to the bulk metal. Conductive structures may be made using such ink compositions by forming a silicon-containing layer on a substrate, printing a metal ink composition on the silicon-containing layer, and curing the composition. The metal inks of the present invention have high conductivity and form low resistivity contacts with silicon, and reduce the number of inks and printing steps needed to fabricate integrated circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.