Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus
US7977243B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 26, 2010 |
| Grant date | Jul 12, 2011 |
| Priority date | — |
| Expiry date | Jan 26, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1078
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.