Manufacturing method of semiconductor device
US7977253B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 19, 2005 |
| Grant date | Jul 12, 2011 |
| Priority date | — |
| Expiry date | Feb 6, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a semiconductor layer having a fine shape is provided. A method for manufacturing a semiconductor device with few variations is provided. In addition, a method for manufacturing a semiconductor device with a high yield is provided where the cost can be reduced with few materials. According to the invention, a semiconductor film is partially irradiated with a laser beam to form an insulating layer, and the semiconductor film is etched using the insulating film as a mask so as to form a semiconductor layer having a desired shape. Then, the semiconductor layer is used to manufacture a semiconductor device. According to the invention, a semiconductor layer having a fine shape can be formed in a predetermined position without using a known photolithography step using a resist.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.