Semiconductor device and method for manufacturing the same
US7977675B2 · kind B2 · utility
63Cited by
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13Claims
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Key dates
| Filing date | Apr 14, 2009 |
| Grant date | Jul 12, 2011 |
| Priority date | — |
| Expiry date | Apr 14, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/423
Abstract
A metallic oxide semiconductor device with high performance and small variations. It is a field effect transistor using a metallic oxide film for the channel, which includes a channel region and a source region and comprises a drain region with a lower oxygen content than the channel region in the metallic oxide, in which the channel region exhibits semiconductor characteristics and the oxygen content decreases with depth below the surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.