Semiconductor device and method of manufacturing semiconductor device
US7977771B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 2, 2009 |
| Grant date | Jul 12, 2011 |
| Priority date | — |
| Expiry date | Nov 26, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/014
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The semiconductor device according to the present invention includes: a semiconductor chip including a wire and a passivation film formed on the outermost surface with an opening partially exposing the wire; a resin layer stacked on the semiconductor chip and provided with a through-hole in a position opposed to a portion of the wire facing the opening; and a pad formed on a peripheral portion of the through-hole in the resin layer and in the through-hole so that an external connection terminal is arranged on the surface thereof. The peripheral portion of the resin layer is formed more thickly than the remaining portion of the resin layer other than the peripheral portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.