High power density switch module with improved thermal management and packaging
US7977821B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 8, 2008 |
| Grant date | Jul 12, 2011 |
| Priority date | — |
| Expiry date | Jun 12, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor power device, e.g., an Insulated Gate Bi-polar Transistor (IGBT) or a Metal-Oxide Field Effect Transistor (MOSFET) may be constructed in a reusable and repairable cost-effective sealed shell. The switch may be provided with direct-pressure-contact caps which may perform as electrical conductors for a semiconductor die of the switch and also as thermal heat-sink contacts for the device. The switch may be provided with internal self-powered gate driving control and PHM incorporated in sealed shell. Embodiments of the switch may be constructed with no external gating/PHM connection pin penetrations through the shell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.