High frequency module provided with power amplifier
US7978031B2 · kind B2 · utility
8Cited by
0References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 14, 2009 |
| Grant date | Jul 12, 2011 |
| Priority date | — |
| Expiry date | Sep 12, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/10166
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention is provided with a high frequency module comprising a multilayered substrate, a power amplifier IC mounted on the upper surface of the multilayered substrate, first and second filters disposed substantially directly below the power amplifier IC in an inner layer of the multilayered substrate, and coupling-reducing ground vias disposed between the first filter and the second filter. At least the first filter is disposed substantially directly below the power amplifier IC. The coupling-reducing ground vias double as thermal vias for dissipating heat generated by the power amplifier IC.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.