Patent · US Active

Stochastic synapse memory element with spike-timing dependent plasticity (STDP)

US7978510B2 · kind B2 · utility

24Cited by

8References

18Claims

0Family size

Assignee

International Business Machines Corporation · US

Inventors

Dharmendra S. Modha · San Jose, US
Stuart S.P. Parkin · San Jose, US

Key dates

Filing date	Mar 1, 2009
Grant date	Jul 12, 2011
Priority date	—
Expiry date	Aug 3, 2029

Classification

Technology area (CPC G)Physics
CPC primaryG11C13/0007
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

An active memory element is provided. A bipolar memory two-terminal element includes polarity-dependent switching. A probability of switching of the bi-polar memory element between a first state and a second state decays exponentially based on time delay and a difference between received signals at the two terminals and a switching threshold magnitude.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.