Method for relaxing a stressed thin film
US7981238B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 26, 2006 |
| Grant date | Jul 19, 2011 |
| Priority date | — |
| Expiry date | Feb 21, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method relaxing a strained thin film, secured via a first main face of an initial support, the second main face of the thin film being a contact face. The method supplies an intermediate support including a polymer layer having a main free contact face, the polymer's thermal expansion coefficient being greater than that of the thin film, adhesively brings into contact the contact face of the strained thin film with the contact face of the polymer layer, eliminates the initial support, realizing relaxation of the thin film through formation of wrinkles and revealing the first main face of the thin film, increases the polymer layer temperature to stretch the relaxed thin film and eliminate the wrinkles, secures the first main face of the thin film with one face of a receiving substrate, and eliminates the intermediate support to obtain a relaxed thin film integral with the receiving substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.