Alloyed semiconductor quantum dots and concentration-gradient alloyed quantum dots, series comprising the same and methods related thereto
US7981667B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2004 |
| Grant date | Jul 19, 2011 |
| Priority date | — |
| Expiry date | May 14, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S435/967
- WIPO fieldPharmaceuticals
- WIPO sectorChemistry
Abstract
An alloyed semiconductor quantum dot comprising an alloy of at least two semiconductors, wherein the quantum dot has a homogeneous composition and is characterized by a band gap energy that is non-linearly related to the molar ratio of the at least two semiconductors; a series of alloyed semiconductor quantum dots related thereto; a concentration-gradient quantum dot comprising an alloy of a first semiconductor and a second semiconductor, wherein the concentration of the first semiconductor gradually increases from the core of the quantum dot to the surface of the quantum dot and the concentration of the second semiconductor gradually decreases from the core of the quantum dot to the surface of the quantum dot; a series of concentration-gradient quantum dots related thereto; in vitro and in vivo methods of use; and methods of producing the alloyed semiconductor and concentration-gradient quantum dots and the series of quantum dots related thereto.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.