Diamond transistor and method of manufacture thereof
US7981721B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2006 |
| Grant date | Jul 19, 2011 |
| Priority date | — |
| Expiry date | Nov 29, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8303
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of manufacturing a transistor, typically a MESFET, includes providing a substrate including single crystal diamond material having a growth surface on which further layers of diamond material can be deposited. The substrate is preferably formed by a CVD process and has high purity. The growth surface has a root-mean-square roughness of 3 nm or less, or is free of steps or protrusions larger than 3 nm. Further diamond layers are deposited on the growth surface to define the active regions of the transistor. An optional n+ shielding layer can be formed in or on the substrate, following which an additional layer of high purity diamond is deposited. A layer of intrinsic diamond may be formed directly on the upper surface of the high purity layer, followed by a boron doped (“delta doped”) layer. A trench is formed in the delta doped layer to define a gate region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.