Manufacturing method of bonded SOI substrate and manufacturing method of semiconductor device
US7981754B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 13, 2007 |
| Grant date | Jul 19, 2011 |
| Priority date | — |
| Expiry date | Sep 12, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3226
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To provide a manufacturing method of a semiconductor substrate and a manufacturing method of a semiconductor device, which prevent reduction in breakdown voltage of a gate oxide film of a device formed in a semiconductor substrate to improve a reliability of the gate oxide film. A manufacturing method of a semiconductor substrate according to the present invention includes: exposing a silicon surface of an active layer substrate 1 made of single-crystal silicon, to which a semiconductor device is formed; forming an oxide film on a support substrate 2 made of single-crystal silicon; and bonding the silicon surface of the active layer substrate 1 to the oxide film formed on the support substrate 2. The silicon surface of the active layer substrate 1 is exposed by removing a spontaneous oxidation film 7 formed on the surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.