Method for depositing silicon

US7981776B2 · kind B2 · utility

Assignee

• Forschungszentrum Jülich GmbH · DE

Inventors

• Tobias Roschek · Wildhaus, CH
• Bernd Rech · Bokensdorf, DE

Key dates

• Filing date: Jan 20, 2004
• Grant date: Jul 19, 2011
• Expiry date: Apr 9, 2025

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

The inventive method for depositing silicon onto a substrate firstly involves the introduction of a reactive silicon-containing gas and hydrogen into the plasma chamber and then the initiation of the plasma. After initiating the plasma, only reactive silicon-containing gas or a gas mixture containing hydrogen is supplied to the plasma chamber in an alternatively continuous manner, and the gas mixture located inside the chamber is, at least in part, simultaneously withdrawn from the chamber. From the start, homogeneous microcrystalline silicon is deposited onto the substrate in the presence of hydrogen.