III-V group compound semiconductor light-emitting diode

US7982205B2 · kind B2 · utility

Assignee

• National Institute of Advanced Industrial Science and Technology · JP

Inventor

• Xue Wang · Regensburg, DE

Key dates

• Filing date: Jan 11, 2007
• Grant date: Jul 19, 2011
• Expiry date: Aug 23, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/824

Abstract

A III-V group compound semiconductor light-emitting diode, containing a substrate 1 having plural crystal planes, and a grown layer formed on the substrate by epitaxial growth, the grown layer at least including a barrier layer 2 and 3 and an active layer 8, wherein at least the active layer of the grown layer has plural crystal planes each having a different bandgap energy in the in-plane direction, and an Ohmic electrode 4 for current injection is formed on a crystal plane (3) having a higher bandgap energy among the plural crystal planes.