TFT substrate and method for manufacturing TFT substrate
US7982215B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 2, 2006 |
| Grant date | Jul 19, 2011 |
| Priority date | — |
| Expiry date | Dec 17, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2203/09
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An object of the invention is to provide a TFT substrate and a method for producing a TFT substrate which is capable of drastically reducing the production cost by decreasing the number of steps in the production process and improving production yield. A TFT substrate includes: a substrate; a gate electrode and a gate wire formed above the substrate; a gate insulating film formed above the gate electrode and the gate wire; a first oxide layer formed above the gate insulating film which is formed at least above the gate electrode; and a second oxide layer formed above the first oxide layer; wherein at least a pixel electrode is formed from the second oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.