Patent · US Active

Light-emitting diode

US7982238B2 · kind B2 · utility

0Cited by
2References
38Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 28, 2008
Grant dateJul 19, 2011
Priority date
Expiry dateOct 15, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/8581

Abstract

A light-emitting diode (LED) is provided, wherein the LED comprises an epitaxial structure, a bonding layer and a composite substrate. The composite substrate comprises a patterned substrate having a pattern and a conductive material layer disposed around the patterned substrate. The bonding layer is formed on the composite substrate. The epitaxial structure is formed on the bonding layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.