Device comprising doped nano-component
US7982274B2 · kind B2 · utility
12Cited by
2References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 30, 2008 |
| Grant date | Jul 19, 2011 |
| Priority date | — |
| Expiry date | May 23, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/938
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A device comprising a doped semiconductor nano-component and a method of forming the device are disclosed. The nano-component is one of a nanotube, nanowire or a nanocrystal film, which may be doped by exposure to an organic amine-containing dopant. Illustrative examples are given for field effect transistors with channels comprising a lead selenide nanowire or nanocrystal film and methods of forming these devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.