Device including contact structure and method of forming the same
US7982318B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 19, 2007 |
| Grant date | Jul 19, 2011 |
| Priority date | — |
| Expiry date | May 20, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/742
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device includes an insulating layer on a substrate having a lower conductive pattern, the insulating layer having a contact hole that penetrates the insulating layer and exposes a portion of the lower conductive pattern, a catalytic pattern having a first portion on the exposed portion of the lower conductive pattern and a second portion on a sidewall of the contact hole, a spacer on the sidewall of the contact hole, wherein the second portion of the catalytic pattern is disposed between the spacer and the sidewall, and a contact plug in the contact hole and contacting the catalytic pattern, the contact plug being a carbon nanotube material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.