Method for measuring PN-junction temperature of light-emitting diode (LED)
US7982486B2 · kind B2 · utility
3Cited by
5References
9Claims
0Family size
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Key dates
| Filing date | Jan 14, 2009 |
| Grant date | Jul 19, 2011 |
| Priority date | — |
| Expiry date | Jul 2, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01K2217/00
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention provides a method for measuring the PN-junction temperature of a light-emitting diode (LED), which uses a reference voltage to establish the function of current, real power, power factor, or driving-time interval on temperature. The initial and thermal-equilibrium values of current, real power, power factor, or driving-time interval are measured, and hence the variations thereof are calculated. Referring to the pre-established function, the temperature change is given. By the temperature change and the initial temperature, the PN-junction temperature of the LED is thereby deduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.