Integrated single-crystal MEMS device
US7982558B2 · kind B2 · utility
9Cited by
17References
10Claims
0Family size
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Key dates
| Filing date | Jun 14, 2007 |
| Grant date | Jul 19, 2011 |
| Priority date | — |
| Expiry date | Dec 23, 2027 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81B2201/0292
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Method of manufacturing a MEMS device integrated in a silicon substrate. In parallel to the manufacturing of the MEMS device passive components as trench capacitors with a high capacitance density can be processed. The method is especially suited for MEMS resonators with resonance frequencies in the range of 10 MHz.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.