Nonvolatile memory apparatus and method of using thin film transistor as nonvolatile memory
US7983092B2 · kind B2 · utility
4Cited by
4References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 13, 2009 |
| Grant date | Jul 19, 2011 |
| Priority date | — |
| Expiry date | Aug 27, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/04
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a nonvolatile memory apparatus and a method of using a thin film transistor (TFT) as a nonvolatile memory by storing carriers in a body of the TFT, which operates a general TFT as a memory cell of a nonvolatile memory by manipulating the electrical characteristics of the TFT in order to integrate with other electrical components formed by TFTs, such as logic circuit or TFT-LCD pixel transistor, on the LCD panel without additional semiconductor manufacturing processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.