Method of manufacturing a semiconductor device
US7985625B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 14, 2009 |
| Grant date | Jul 26, 2011 |
| Priority date | — |
| Expiry date | May 16, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device involves the steps of: forming a plurality of product formation areas each having a circuit and a plurality of first electrode pads over a main surface of a semiconductor wafer; arranging a plurality of second electrode pads with larger pitches than the first electrode pads in each of the product formation areas; segmenting the semiconductor wafer to separate the plural product formation areas and provide a plurality of semiconductor devices each having the circuit, the plural first electrode pads and the plural second electrode pads on a first surface; and cleaning foreign matter off the first surface of the semiconductor device after the step of segmenting the semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.