Manufacturing method for compound semiconductor device and etching solution
US7985637B2 · kind B2 · utility
7Cited by
1References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 9, 2008 |
| Grant date | Jul 26, 2011 |
| Priority date | — |
| Expiry date | Nov 25, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/4755
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
After an n-type AlGaN barrier layer (3) is formed over a substrate (1), an n-type GaN contact layer (4) is formed over the n-type AlGaN barrier layer (3). Next, the n-type GaN contact layer (4) is wet-etched with using an etching solution containing an organic alkali agent and an oxidizer while the n-type GaN contact layer (4) is irradiated with an ultraviolet illumination.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.