Method of forming substrate for use in imager devices
US7985658B2 · kind B2 · utility
30Cited by
4References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 8, 2009 |
| Grant date | Jul 26, 2011 |
| Priority date | — |
| Expiry date | Mar 11, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/014
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor substrate structure comprises forming an oxide region in contact with a first semiconductor, e.g. silicon, substrate, implanting P-type dopants into the first semiconductor substrate to form a P-doped region, bonding the oxide region to a second semiconductor, e.g. silicon, substrate, and removing a portion of the first semiconductor substrate before or after implanting.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.