Method for fabricating a semiconductor device that includes processing an insulating film to have an upper portion with a different composition than an other portion
US7985675B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Oct 15, 2008 |
| Grant date | Jul 26, 2011 |
| Priority date | — |
| Expiry date | Aug 20, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a semiconductor substrate; a first insulating film (third insulating film 24) formed on the semiconductor substrate, having a first trench (second interconnect trench 28), and having a composition ratio varying along the depth from an upper face of the first insulating film; and a first metal interconnect (second metal interconnect 25) filling the first trench (second interconnect trench 28). The mechanical strength in an upper portion of the first insulating film (third insulating film 24) is higher than that in the other portion of the insulating film (third insulating film 24).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.