Voltage excited piezoelectric resistance memory cell system
US7985960B2 · kind B2 · utility
0Cited by
2References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 16, 2009 |
| Grant date | Jul 26, 2011 |
| Priority date | — |
| Expiry date | Aug 4, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/77
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention discloses a memory system comprising a plurality of crystals, and at least two conductors. The at least two conductors being orthogonal to each other. Wherein at least one of the plurality of crystals are bounded by the orthogonal intersection of the at least two conductors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.