Patent · US Active

Encapsulated metal resistor

US7986027B2 · kind B2 · utility

2Cited by
4References
22Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 20, 2006
Grant dateJul 26, 2011
Priority date
Expiry dateMay 26, 2030

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/3011
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The method provides a semiconductor structure and method for forming such a structure that provides for protection for resistive layers formed within the structure from contamination from adjacent layers. By encapsulating the resistive layer in a material that is resistant to the diffusion of contaminants it is possible to protect the resistive material during the processing required to manufacture the structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.