Film bulk acoustic wave resonator, its fabrication method and film bulk acoustic wave resonator filter using the resonator
US7986075B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2008 |
| Grant date | Jul 26, 2011 |
| Priority date | — |
| Expiry date | Dec 9, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/42
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The film bulk acoustic wave resonator includes a laminate structure composed of a piezoelectric layer, and first and second electrode layers interposing at least part of the piezoelectric layer, in which the first metal electrode is dispersively formed on an electrode plane facing the second metal electrode, and a gap is formed in a substrate correspondingly to the laminate-structured resonance part. Except for an area of a wire electrode electrically connected to the first electrode layer and an area of a wire electrode electrically connected to the second electrode layer, the piezoelectric layer, first electrode layer and second electrode layer do not come in contact with the insulating substrate but are supported on a hollow. Also, a prop is formed in the gap to support the laminate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.