Electron-emitting device
US7986080B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 25, 2007 |
| Grant date | Jul 26, 2011 |
| Priority date | — |
| Expiry date | Feb 4, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2201/3165
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electron-emitting device and a fabricating method thereof are provided. First, a substrate, having a first side and a second side which is opposite to the first side, is provided. Afterwards, a first electrode pattern layer is formed on the first side of the substrate. Next, a conductive pattern layer is formed on the substrate and the first electrode pattern layer. After that, an electron-emitting region is formed in the conductive pattern layer. Then, a second electrode pattern layer is formed on the second side of the substrate and partially covers the conductive pattern layer. The fabricating method has a simple fabricating process and a low fabricating cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.