High trigger current silicon controlled rectifier

US7986502B2 · kind B2 · utility

Assignee

• SOFICS BVBA · BE

Inventor

• Bart Sorgeloos · Gistel, BE

Key dates

• Filing date: Jul 9, 2009
• Grant date: Jul 26, 2011
• Expiry date: Sep 21, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/811

Abstract

An ESD protection circuit including an SCR having at least a PNP transistor and at least a NPN transistor such that said PNP transistor is coupled to an anode and the NPN transistor is coupled to a cathode. The circuit also includes a first resistor coupled between the anode and the base of the pnp transistor and a second resistor coupled between the cathode and the base of the npn transistor. A parasitic distributed bipolar transistor is formed between said first and second transistor to control triggering of the SCR.