Electronic devices based on current induced magnetization dynamics in single magnetic layers
US7986544B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 5, 2007 |
| Grant date | Jul 26, 2011 |
| Priority date | — |
| Expiry date | May 9, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F1/404
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention generally relates to magnetic devices used in memory and information processing applications, such as giant magneto-resistance (GMR) devices and tunneling magneto-resistance devices. More specifically, the present invention is directed to a single ferromagnetic layer device in which an electrical current is used to control and change magnetic configurations as well as induce high frequency magnetization dynamics. The magnetic layer includes full spin-polarized magnetic material, which may also have non-uniform magnetization. The non-uniform magnetization is achieved by varying the shape or roughness of the magnetic material. The present invention may be used in memory cells, as well as high frequency electronics, such as compact microwave sources, detectors, mixers and phase shifters.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.