Patent · US Active

Non-volatile shadow latch using a nanotube switch

US7986546B2 · kind B2 · utility

6Cited by

87References

20Claims

0Family size

Assignee

Nantero, Inc. · US

Inventors

Claude L. Bertin · Venice, US
Frank Guo · Danville, US
Thomas Rueckes · Boston, US
Steven L. Konsek · Boston, US
Mitchell Meinhold · Medford, US
Max Strasburg · Gresham, US
Ramesh Sivarajan · Shrewsbury, US
X. M. Henry Huang · Cupertino, US

Key dates

Filing date	Jun 30, 2008
Grant date	Jul 26, 2011
Priority date	—
Expiry date	Nov 19, 2029

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S977/943
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A non-volatile memory cell includes a volatile storage device that stores a corresponding logic state in response to electrical stimulus; and a shadow memory device coupled to the volatile storage device. The shadow memory device receives and stores the corresponding logic state in response to electrical stimulus. The shadow memory device includes a non-volatile nanotube switch that stores the corresponding state of the shadow device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.