Package structure for solid-state lighting devices and method of fabricating the same

US7989237B2 · kind B2 · utility

Assignee

• ADVANCED OPTOELECTRONIC TECHNOLOGY, INC. · TW

Inventors

• Wen-Liang Tseng · Hsinchu, TW
• LUNG-HSIN CHEN · Hsinchu, TW

Key dates

• Filing date: Sep 25, 2008
• Grant date: Aug 2, 2011
• Expiry date: Jan 23, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8585

Abstract

Silicon substrates are applied to the package structure of solid-state lighting devices. Wet etching is performed to both top and bottom surfaces of the silicon substrate to form reflecting cavity and electrode access holes. Materials of the reflecting layer and electrode can be different from each other whose preferred materials can be chosen in accordance with a correspondent function. Formation of the electrode can be patterned by an etching method or a lift-off method.